advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v small package outline r ds(on) 5 surface mount device i d 0.25a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 180 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 0.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.005 continuous drain current 3 , v gs @ 10v 0.2 pulsed drain current 1 1 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 0.25 parameter rating drain-source voltage 100 1 AP2320GN rohs-compliant product 201211145 g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =0.25a - - 5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.4a, v gs =0v - - 1.5 v t rr reverse recovery time i s =1a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=100a/s - 28 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ;400 AP2320GN
AP2320GN fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 0.2 0.4 0.6 0.8 1 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 0.2 0.4 0.6 0.8 1 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 9 .0v 8 .0v 7.0 v v g = 6 .0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 0.25 a v g =10v 0.1 1 10 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) i d =250ua
AP2320GN fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 2 4 6 8 10 12 0123 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 0.4 a v ds =80v 1 10 100 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 400
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